All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti₃C₂T_<i>x</i> MXene Contacts

Fully solution-processed, large-area, electrical double-layer transistors (EDLTs) are presented by employing lead sulfide (PbS) colloidal quantum dots (CQDs) as active channels and Ti3C2Tx MXene contacts (including gate, source, drain). The successfully patterned standard photolithography plasma-etch techniques integrated with CQD films. large surface area of film is effectively gated ionic gel, resulting in high performance EDLT devices. A electron saturation mobility 3.32 cm2 V–1 s–1 current modulation 1.87 × 104 operating at low driving gate voltage range 1.25 V negligible hysteresis achieved. relatively work function (4.42 eV) compared to vacuum-evaporated noble metals such Au Pt makes them a suitable contact material for n-type transport iodide-capped PbS films LUMO level ∼4.14 eV. Moreover, we demonstrate that the negative charges enhance accumulation cations lower bias, achieving threshold 0.36 V. results suggest promising potential exploiting their charges.